Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation
- DOI
- 10.1109/issm.2001.962943
- Published
- Not recorded
- Container
- 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/issm.2001.962943,
title = {Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation},
author = {M.C. Yu and H.T. Huang and C.H. Chen and M.F. Wang and T.H. Hou and Y.M. Lin and S.M. Jang and C.H. Diaz and J. Sun and Y.K. Fang and S.C. Chen and C.H. Yu and M.S. Liang},
journal = {2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)},
doi = {10.1109/issm.2001.962943},
url = {https://doi.org/10.1109/issm.2001.962943}
}RIS
TY - JOUR TI - Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation AU - M.C. Yu AU - H.T. Huang AU - C.H. Chen AU - M.F. Wang AU - T.H. Hou AU - Y.M. Lin AU - S.M. Jang AU - C.H. Diaz AU - J. Sun AU - Y.K. Fang AU - S.C. Chen AU - C.H. Yu AU - M.S. Liang JO - 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) DO - 10.1109/issm.2001.962943 UR - https://doi.org/10.1109/issm.2001.962943 ER -
APA
Yu, M., Huang, H., Chen, C., Wang, M., Hou, T., Lin, Y., Jang, S., Diaz, C., Sun, J., Fang, Y., Chen, S., Yu, C., & Liang, M. (n.d.). Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation. 2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203). https://doi.org/10.1109/issm.2001.962943
Source records
- crossref · retrieved 2026-09-24T23:46:59.333Z