Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise
- DOI
- 10.1109/jeds.2013.2258072
- Published
- 2013-02
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2013.2258072,
title = {Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise},
author = {George M. Williams and Madison Compton and David A. Ramirez and Majeed M. Hayat and Andrew S. Huntington},
year = {2013},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2013.2258072},
url = {https://doi.org/10.1109/jeds.2013.2258072}
}RIS
TY - JOUR TI - Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise AU - George M. Williams AU - Madison Compton AU - David A. Ramirez AU - Majeed M. Hayat AU - Andrew S. Huntington PY - 2013 JO - IEEE Journal of the Electron Devices Society DO - 10.1109/jeds.2013.2258072 UR - https://doi.org/10.1109/jeds.2013.2258072 ER -
APA
Williams, G. M., Compton, M., Ramirez, D. A., Hayat, M. M., & Huntington, A. S. (2013). Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2013.2258072
Source records
- crossref · retrieved 2026-09-27T05:01:27.473Z