Investigation of $I-V$ Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications
- DOI
- 10.1109/jeds.2019.2902653
- Published
- 2019
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2019.2902653,
title = {Investigation of \$I-V\$ Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications},
author = {Changhyuck Sung and Andrea Padovani and Bastien Beltrando and Donguk Lee and Myunghoon Kwak and Seokjae Lim and Luca Larcher and Vincenzo Della Marca and Hyunsang Hwang},
year = {2019},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2019.2902653},
url = {https://doi.org/10.1109/jeds.2019.2902653}
}RIS
TY - JOUR TI - Investigation of $I-V$ Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications AU - Changhyuck Sung AU - Andrea Padovani AU - Bastien Beltrando AU - Donguk Lee AU - Myunghoon Kwak AU - Seokjae Lim AU - Luca Larcher AU - Vincenzo Della Marca AU - Hyunsang Hwang PY - 2019 JO - IEEE Journal of the Electron Devices Society DO - 10.1109/jeds.2019.2902653 UR - https://doi.org/10.1109/jeds.2019.2902653 ER -
APA
Sung, C., Padovani, A., Beltrando, B., Lee, D., Kwak, M., Lim, S., Larcher, L., Marca, V. D., & Hwang, H. (2019). Investigation of $I-V$ Linearity in TaO<sub>x</sub>-Based RRAM Devices for Neuromorphic Applications. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2019.2902653
Source records
- crossref · retrieved 2026-11-10T10:47:51.516Z