Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process
- DOI
- 10.1109/jeds.2019.2941519
- Published
- 2019
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2019.2941519,
title = {Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process},
author = {Hsien-Chin Chiu and Chia-Hao Liu and Yi-Sheng Chang and Hsuan-Ling Kao and Rong Xuan and Chih-Wei Hu and Feng-Tso Chien},
year = {2019},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2019.2941519},
url = {https://doi.org/10.1109/jeds.2019.2941519}
}RIS
TY - JOUR TI - Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process AU - Hsien-Chin Chiu AU - Chia-Hao Liu AU - Yi-Sheng Chang AU - Hsuan-Ling Kao AU - Rong Xuan AU - Chih-Wei Hu AU - Feng-Tso Chien PY - 2019 JO - IEEE Journal of the Electron Devices Society DO - 10.1109/jeds.2019.2941519 UR - https://doi.org/10.1109/jeds.2019.2941519 ER -
APA
Chiu, H., Liu, C., Chang, Y., Kao, H., Xuan, R., Hu, C., & Chien, F. (2019). Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2019.2941519
Source records
- crossref · retrieved 2026-11-10T11:21:02.645Z