Superjunction Power Transistors With Interface Charges: A Case Study for GaN

Yunwei Ma, Ming Xiao, Ruizhe Zhang, Han Wang, Yuhao Zhang

Open source

DOI: 10.1109/jeds.2019.2959713
Published: 2020
Container: IEEE Journal of the Electron Devices Society
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1109/jeds.2019.2959713,
  title = {Superjunction Power Transistors With Interface Charges: A Case Study for GaN},
  author = {Yunwei Ma and Ming Xiao and Ruizhe Zhang and Han Wang and Yuhao Zhang},
  year = {2020},
  journal = {IEEE Journal of the Electron Devices Society},
  doi = {10.1109/jeds.2019.2959713},
  url = {https://doi.org/10.1109/jeds.2019.2959713}
}

RIS

TY  - JOUR
TI  - Superjunction Power Transistors With Interface Charges: A Case Study for GaN
AU  - Yunwei Ma
AU  - Ming Xiao
AU  - Ruizhe Zhang
AU  - Han Wang
AU  - Yuhao Zhang
PY  - 2020
JO  - IEEE Journal of the Electron Devices Society
DO  - 10.1109/jeds.2019.2959713
UR  - https://doi.org/10.1109/jeds.2019.2959713
ER  -

APA

Ma, Y., Xiao, M., Zhang, R., Wang, H., & Zhang, Y. (2020). Superjunction Power Transistors With Interface Charges: A Case Study for GaN. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2019.2959713

Source records

crossref · retrieved 2026-11-09T12:41:06.144Z