Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

Michael R. Hontz, Rongming Chu, Raghav Khanna

Open source

DOI: 10.1109/jeds.2020.2981607
Published: 2020
Container: IEEE Journal of the Electron Devices Society
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1109/jeds.2020.2981607,
  title = {Effect of Substrate Choice on Transient Performance of Lateral GaN FETs},
  author = {Michael R. Hontz and Rongming Chu and Raghav Khanna},
  year = {2020},
  journal = {IEEE Journal of the Electron Devices Society},
  doi = {10.1109/jeds.2020.2981607},
  url = {https://doi.org/10.1109/jeds.2020.2981607}
}

RIS

TY  - JOUR
TI  - Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
AU  - Michael R. Hontz
AU  - Rongming Chu
AU  - Raghav Khanna
PY  - 2020
JO  - IEEE Journal of the Electron Devices Society
DO  - 10.1109/jeds.2020.2981607
UR  - https://doi.org/10.1109/jeds.2020.2981607
ER  -

APA

Hontz, M. R., Chu, R., & Khanna, R. (2020). Effect of Substrate Choice on Transient Performance of Lateral GaN FETs. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2020.2981607

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doaj · retrieved 2026-09-26T10:36:19.526Z