Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing
- DOI
- 10.1109/jeds.2021.3131911
- Published
- 2022
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2021.3131911,
title = {Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing},
author = {Toshiyuki Tabata and Fabien Roze and Pablo Acosta Alba and Sebastien Halty and Pierre-Edouard Raynal and Imen Karmous and Sebastien Kerdiles and Fulvio Mazzamuto},
year = {2022},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2021.3131911},
url = {https://doi.org/10.1109/jeds.2021.3131911}
}RIS
TY - JOUR TI - Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing AU - Toshiyuki Tabata AU - Fabien Roze AU - Pablo Acosta Alba AU - Sebastien Halty AU - Pierre-Edouard Raynal AU - Imen Karmous AU - Sebastien Kerdiles AU - Fulvio Mazzamuto PY - 2022 JO - IEEE Journal of the Electron Devices Society DO - 10.1109/jeds.2021.3131911 UR - https://doi.org/10.1109/jeds.2021.3131911 ER -
APA
Tabata, T., Roze, F., Alba, P. A., Halty, S., Raynal, P., Karmous, I., Kerdiles, S., & Mazzamuto, F. (2022). Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2021.3131911
Source records
- crossref · retrieved 2026-09-27T07:03:51.901Z