Repetitive Gate-HBM-ESD-Induced V <sub>th</sub> Degradation for RF GaN HEMT With Matching Networks
- DOI
- 10.1109/jeds.2026.3654157
- Published
- 2026
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2026.3654157,
title = {Repetitive Gate-HBM-ESD-Induced V
<sub>th</sub>
Degradation for RF GaN HEMT With Matching Networks},
author = {Ran Ye and Hao Luo and Suyuan Wang and Zhiqiang Hu and Jiaojing Bian and Qiao Kang and Sheng Li and Siyang Liu and Weifeng Sun},
year = {2026},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2026.3654157},
url = {https://doi.org/10.1109/jeds.2026.3654157}
}RIS
TY - JOUR
TI - Repetitive Gate-HBM-ESD-Induced V
<sub>th</sub>
Degradation for RF GaN HEMT With Matching Networks
AU - Ran Ye
AU - Hao Luo
AU - Suyuan Wang
AU - Zhiqiang Hu
AU - Jiaojing Bian
AU - Qiao Kang
AU - Sheng Li
AU - Siyang Liu
AU - Weifeng Sun
PY - 2026
JO - IEEE Journal of the Electron Devices Society
DO - 10.1109/jeds.2026.3654157
UR - https://doi.org/10.1109/jeds.2026.3654157
ER - APA
Ye, R., Luo, H., Wang, S., Hu, Z., Bian, J., Kang, Q., Li, S., Liu, S., & Sun, W. (2026). Repetitive Gate-HBM-ESD-Induced V <sub>th</sub> Degradation for RF GaN HEMT With Matching Networks. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2026.3654157
Source records
- crossref · retrieved 2026-11-10T12:53:37.813Z