Impact of Power Loss in the Substrate on the Efficiency of RF GaN-on-Si HEMTs
- DOI
- 10.1109/jeds.2026.3678426
- Published
- 2026
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2026.3678426,
title = {Impact of Power Loss in the Substrate on the Efficiency of RF GaN-on-Si HEMTs},
author = {Pieter Cardinael and Alexis Divay and Ismael Charlet and Yveline Gobil and Erwan Morvan and Jean-Pierre Raskin},
year = {2026},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2026.3678426},
url = {https://doi.org/10.1109/jeds.2026.3678426}
}RIS
TY - JOUR TI - Impact of Power Loss in the Substrate on the Efficiency of RF GaN-on-Si HEMTs AU - Pieter Cardinael AU - Alexis Divay AU - Ismael Charlet AU - Yveline Gobil AU - Erwan Morvan AU - Jean-Pierre Raskin PY - 2026 JO - IEEE Journal of the Electron Devices Society DO - 10.1109/jeds.2026.3678426 UR - https://doi.org/10.1109/jeds.2026.3678426 ER -
APA
Cardinael, P., Divay, A., Charlet, I., Gobil, Y., Morvan, E., & Raskin, J. (2026). Impact of Power Loss in the Substrate on the Efficiency of RF GaN-on-Si HEMTs. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2026.3678426
Source records
- crossref · retrieved 2026-09-26T00:40:10.214Z