Improved Endurance in HfZrO<sub>x</sub>-Based Junctionless FeTFTs Using an Asymmetric Dual-Gate Architecture
- DOI
- 10.1109/jeds.2026.3694708
- Published
- 2026
- Container
- IEEE Journal of the Electron Devices Society
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1109/jeds.2026.3694708,
title = {Improved Endurance in HfZrO<sub>x</sub>-Based Junctionless FeTFTs Using an Asymmetric Dual-Gate Architecture},
author = {William Cheng-Yu Ma and Chun-Jung Su and Kuo-Hsing Kao and Ta-Chun Cho and Jhao-Fong Deng and Yen-Lun Hsieh and Huan Hsu and Tzu-Chi Liu and An-de Xu and Che-Hsun Tsai},
year = {2026},
journal = {IEEE Journal of the Electron Devices Society},
doi = {10.1109/jeds.2026.3694708},
url = {https://doi.org/10.1109/jeds.2026.3694708}
}RIS
TY - JOUR TI - Improved Endurance in HfZrO<sub>x</sub>-Based Junctionless FeTFTs Using an Asymmetric Dual-Gate Architecture AU - William Cheng-Yu Ma AU - Chun-Jung Su AU - Kuo-Hsing Kao AU - Ta-Chun Cho AU - Jhao-Fong Deng AU - Yen-Lun Hsieh AU - Huan Hsu AU - Tzu-Chi Liu AU - An-de Xu AU - Che-Hsun Tsai PY - 2026 JO - IEEE Journal of the Electron Devices Society DO - 10.1109/jeds.2026.3694708 UR - https://doi.org/10.1109/jeds.2026.3694708 ER -
APA
Ma, W. C., Su, C., Kao, K., Cho, T., Deng, J., Hsieh, Y., Hsu, H., Liu, T., Xu, A., & Tsai, C. (2026). Improved Endurance in HfZrO<sub>x</sub>-Based Junctionless FeTFTs Using an Asymmetric Dual-Gate Architecture. IEEE Journal of the Electron Devices Society. https://doi.org/10.1109/jeds.2026.3694708
Source records
- doaj · retrieved 2026-11-10T12:10:19.089Z