Compact Three-Way LMBA With Arbitrary Power Back-Off Level in 28 nm CMOS

Hyungjun Kim, Geuntae Kim, Kyutaek Oh, Sangjin Yoo, Ilku Nam, Ockgoo Lee

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DOI: 10.1109/jmw.2026.3710480
Published: 2026-09
Container: IEEE Journal of Microwaves
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1109/jmw.2026.3710480,
  title = {Compact Three-Way LMBA With Arbitrary Power Back-Off Level in 28 nm CMOS},
  author = {Hyungjun Kim and Geuntae Kim and Kyutaek Oh and Sangjin Yoo and Ilku Nam and Ockgoo Lee},
  year = {2026},
  journal = {IEEE Journal of Microwaves},
  doi = {10.1109/jmw.2026.3710480},
  url = {https://doi.org/10.1109/jmw.2026.3710480}
}

RIS

TY  - JOUR
TI  - Compact Three-Way LMBA With Arbitrary Power Back-Off Level in 28 nm CMOS
AU  - Hyungjun Kim
AU  - Geuntae Kim
AU  - Kyutaek Oh
AU  - Sangjin Yoo
AU  - Ilku Nam
AU  - Ockgoo Lee
PY  - 2026
JO  - IEEE Journal of Microwaves
DO  - 10.1109/jmw.2026.3710480
UR  - https://doi.org/10.1109/jmw.2026.3710480
ER  -

APA

Kim, H., Kim, G., Oh, K., Yoo, S., Nam, I., & Lee, O. (2026). Compact Three-Way LMBA With Arbitrary Power Back-Off Level in 28 nm CMOS. IEEE Journal of Microwaves. https://doi.org/10.1109/jmw.2026.3710480

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crossref · retrieved 2026-09-25T12:55:26.862Z