Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

Anton Losev, Vladimir Zavodilenko, Andrey Koziy, Yury Kurochkin, Alexander Gorbatsevich

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DOI: 10.1109/jphot.2022.3148204
Published: 2022
Container: IEEE Photonics Journal
Publisher: Not recorded
Open access: yes

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BibTeX

@article{allodium:10.1109/jphot.2022.3148204,
  title = {Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters},
  author = {Anton Losev and Vladimir Zavodilenko and Andrey Koziy and Yury Kurochkin and Alexander Gorbatsevich},
  year = {2022},
  journal = {IEEE Photonics Journal},
  doi = {10.1109/jphot.2022.3148204},
  url = {https://doi.org/10.1109/jphot.2022.3148204}
}

RIS

TY  - JOUR
TI  - Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters
AU  - Anton Losev
AU  - Vladimir Zavodilenko
AU  - Andrey Koziy
AU  - Yury Kurochkin
AU  - Alexander Gorbatsevich
PY  - 2022
JO  - IEEE Photonics Journal
DO  - 10.1109/jphot.2022.3148204
UR  - https://doi.org/10.1109/jphot.2022.3148204
ER  -

APA

Losev, A., Zavodilenko, V., Koziy, A., Kurochkin, Y., & Gorbatsevich, A. (2022). Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters. IEEE Photonics Journal. https://doi.org/10.1109/jphot.2022.3148204

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doaj · retrieved 2026-09-25T22:10:21.802Z