Impact of Ge Substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-Based VCSELs
- DOI
- 10.1109/jphot.2025.3627564
- Published
- 2025
- Container
- IEEE Photonics Journal
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1109/jphot.2025.3627564,
title = {Impact of Ge Substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-Based VCSELs},
author = {Wenhan Dong and Zeyu Wan and Yun-Cheng Yang and Chao-Hsin Wu and Yiwen Zhang and Rui-Tao Wen and Guangrui Xia},
year = {2025},
journal = {IEEE Photonics Journal},
doi = {10.1109/jphot.2025.3627564},
url = {https://doi.org/10.1109/jphot.2025.3627564}
}RIS
TY - JOUR TI - Impact of Ge Substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-Based VCSELs AU - Wenhan Dong AU - Zeyu Wan AU - Yun-Cheng Yang AU - Chao-Hsin Wu AU - Yiwen Zhang AU - Rui-Tao Wen AU - Guangrui Xia PY - 2025 JO - IEEE Photonics Journal DO - 10.1109/jphot.2025.3627564 UR - https://doi.org/10.1109/jphot.2025.3627564 ER -
APA
Dong, W., Wan, Z., Yang, Y., Wu, C., Zhang, Y., Wen, R., & Xia, G. (2025). Impact of Ge Substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-Based VCSELs. IEEE Photonics Journal. https://doi.org/10.1109/jphot.2025.3627564
Source records
- doaj · retrieved 2026-09-26T23:16:36.016Z