Investigation of p-Type Silicon Heterojunction Radiation Hardness

Romain Cariou, Adrien Danel, Nicolas Enjalbert, Frédéric Jay, Sébastien Dubois

Open source

DOI: 10.1109/jphotov.2023.3333197
Published: 2024-01
Container: IEEE Journal of Photovoltaics
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1109/jphotov.2023.3333197,
  title = {Investigation of p-Type Silicon Heterojunction Radiation Hardness},
  author = {Romain Cariou and Adrien Danel and Nicolas Enjalbert and Frédéric Jay and Sébastien Dubois},
  year = {2024},
  journal = {IEEE Journal of Photovoltaics},
  doi = {10.1109/jphotov.2023.3333197},
  url = {https://doi.org/10.1109/jphotov.2023.3333197}
}

RIS

TY  - JOUR
TI  - Investigation of p-Type Silicon Heterojunction Radiation Hardness
AU  - Romain Cariou
AU  - Adrien Danel
AU  - Nicolas Enjalbert
AU  - Frédéric Jay
AU  - Sébastien Dubois
PY  - 2024
JO  - IEEE Journal of Photovoltaics
DO  - 10.1109/jphotov.2023.3333197
UR  - https://doi.org/10.1109/jphotov.2023.3333197
ER  -

APA

Cariou, R., Danel, A., Enjalbert, N., Jay, F., & Dubois, S. (2024). Investigation of p-Type Silicon Heterojunction Radiation Hardness. IEEE Journal of Photovoltaics. https://doi.org/10.1109/jphotov.2023.3333197

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crossref · retrieved 2026-11-08T20:25:04.145Z