Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials
- DOI
- 10.1109/jxcdc.2015.2423096
- Published
- 2015-12
- Container
- IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/jxcdc.2015.2423096,
title = {Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials},
author = {Hesameddin Ilatikhameneh and Yaohua Tan and Bozidar Novakovic and Gerhard Klimeck and Rajib Rahman and Joerg Appenzeller},
year = {2015},
journal = {IEEE Journal on Exploratory Solid-State Computational Devices and Circuits},
doi = {10.1109/jxcdc.2015.2423096},
url = {https://doi.org/10.1109/jxcdc.2015.2423096}
}RIS
TY - JOUR TI - Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials AU - Hesameddin Ilatikhameneh AU - Yaohua Tan AU - Bozidar Novakovic AU - Gerhard Klimeck AU - Rajib Rahman AU - Joerg Appenzeller PY - 2015 JO - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits DO - 10.1109/jxcdc.2015.2423096 UR - https://doi.org/10.1109/jxcdc.2015.2423096 ER -
APA
Ilatikhameneh, H., Tan, Y., Novakovic, B., Klimeck, G., Rahman, R., & Appenzeller, J. (2015). Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits. https://doi.org/10.1109/jxcdc.2015.2423096
Source records
- crossref · retrieved 2026-09-25T15:37:22.783Z