Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Alice Pelamatti, Vincent Goiffon, Magali Estribeau, Paola Cervantes, Pierre Magnan

Open source

DOI
10.1109/led.2013.2260523
Published
2013-07
Container
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Open access
unknown

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BibTeX

@article{allodium:10.1109/led.2013.2260523,
  title = {Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors},
  author = {Alice Pelamatti and Vincent Goiffon and Magali Estribeau and Paola Cervantes and Pierre Magnan},
  year = {2013},
  journal = {IEEE Electron Device Letters},
  doi = {10.1109/led.2013.2260523},
  url = {https://doi.org/10.1109/led.2013.2260523}
}

RIS

TY  - JOUR
TI  - Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors
AU  - Alice Pelamatti
AU  - Vincent Goiffon
AU  - Magali Estribeau
AU  - Paola Cervantes
AU  - Pierre Magnan
PY  - 2013
JO  - IEEE Electron Device Letters
DO  - 10.1109/led.2013.2260523
UR  - https://doi.org/10.1109/led.2013.2260523
ER  - 

APA

Pelamatti, A., Goiffon, V., Estribeau, M., Cervantes, P., & Magnan, P. (2013). Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors. IEEE Electron Device Letters. https://doi.org/10.1109/led.2013.2260523

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