Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors
- DOI
- 10.1109/led.2013.2260523
- Published
- 2013-07
- Container
- IEEE Electron Device Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/led.2013.2260523,
title = {Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors},
author = {Alice Pelamatti and Vincent Goiffon and Magali Estribeau and Paola Cervantes and Pierre Magnan},
year = {2013},
journal = {IEEE Electron Device Letters},
doi = {10.1109/led.2013.2260523},
url = {https://doi.org/10.1109/led.2013.2260523}
}RIS
TY - JOUR TI - Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors AU - Alice Pelamatti AU - Vincent Goiffon AU - Magali Estribeau AU - Paola Cervantes AU - Pierre Magnan PY - 2013 JO - IEEE Electron Device Letters DO - 10.1109/led.2013.2260523 UR - https://doi.org/10.1109/led.2013.2260523 ER -
APA
Pelamatti, A., Goiffon, V., Estribeau, M., Cervantes, P., & Magnan, P. (2013). Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors. IEEE Electron Device Letters. https://doi.org/10.1109/led.2013.2260523
Source records
- crossref · retrieved 2026-09-26T02:56:04.667Z