CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications.
- DOI
- 10.1109/led.2018.2844545
- Published
- 2018 Jul
- Container
- IEEE electron device letters : a publication of the IEEE Electron Devices Society
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1109/led.2018.2844545,
title = {CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications.},
author = {Fleischer DA and Shekar S and Dai S and Field RM and Lary J and Rosenstein JK and Shepard KL},
year = {2018},
journal = {IEEE electron device letters : a publication of the IEEE Electron Devices Society},
doi = {10.1109/led.2018.2844545},
url = {https://doi.org/10.1109/led.2018.2844545}
}RIS
TY - JOUR TI - CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications. AU - Fleischer DA AU - Shekar S AU - Dai S AU - Field RM AU - Lary J AU - Rosenstein JK AU - Shepard KL PY - 2018 JO - IEEE electron device letters : a publication of the IEEE Electron Devices Society DO - 10.1109/led.2018.2844545 UR - https://doi.org/10.1109/led.2018.2844545 ER -
APA
DA, F., S, S., S, D., RM, F., J, L., JK, R., & KL, S. (2018). CMOS-Integrated Low-Noise Junction Field-Effect Transistors for Bioelectronic Applications.. IEEE electron device letters : a publication of the IEEE Electron Devices Society. https://doi.org/10.1109/led.2018.2844545
Source records
- pubmed · retrieved 2026-09-26T12:21:27.423Z