A Hall Effect-Based Force Sensing Mechanism for Force Sensing Inside Magnetic Resonance Imaging Scanner
- DOI
- 10.1109/lsens.2025.3591071
- Published
- 2025-09
- Container
- IEEE Sensors Letters
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/lsens.2025.3591071,
title = {A Hall Effect-Based Force Sensing Mechanism for Force Sensing Inside Magnetic Resonance Imaging Scanner},
author = {Yen-Chun Chen and Ran Hao and Adam Thompson and Mark Griswold and M. Cenk Çavuşoğlu},
year = {2025},
journal = {IEEE Sensors Letters},
doi = {10.1109/lsens.2025.3591071},
url = {https://doi.org/10.1109/lsens.2025.3591071}
}RIS
TY - JOUR TI - A Hall Effect-Based Force Sensing Mechanism for Force Sensing Inside Magnetic Resonance Imaging Scanner AU - Yen-Chun Chen AU - Ran Hao AU - Adam Thompson AU - Mark Griswold AU - M. Cenk Çavuşoğlu PY - 2025 JO - IEEE Sensors Letters DO - 10.1109/lsens.2025.3591071 UR - https://doi.org/10.1109/lsens.2025.3591071 ER -
APA
Chen, Y., Hao, R., Thompson, A., Griswold, M., & Çavuşoğlu, M. C. (2025). A Hall Effect-Based Force Sensing Mechanism for Force Sensing Inside Magnetic Resonance Imaging Scanner. IEEE Sensors Letters. https://doi.org/10.1109/lsens.2025.3591071
Source records
- crossref · retrieved 2026-09-25T20:56:29.288Z