Hybrid nanoelectromechanical switch and resistive memory in silicon nanowires by VLSI NEMS

Rui Yang, Maosong Xie, Yueyang Jia, Laurent Duraffourg, Philip X.-L. Feng

DOI: 10.1109/mems51782.2021.9375188
Published: 2021
Container: Not recorded
Publisher: IEEE
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1109/mems51782.2021.9375188,
  title = {Hybrid nanoelectromechanical switch and resistive memory in silicon nanowires by VLSI NEMS},
  author = {Rui Yang and Maosong Xie and Yueyang Jia and Laurent Duraffourg and Philip X.-L. Feng},
  year = {2021},
  doi = {10.1109/mems51782.2021.9375188},
  url = {https://doi.org/10.1109/mems51782.2021.9375188}
}

RIS

TY  - JOUR
TI  - Hybrid nanoelectromechanical switch and resistive memory in silicon nanowires by VLSI NEMS
AU  - Rui Yang
AU  - Maosong Xie
AU  - Yueyang Jia
AU  - Laurent Duraffourg
AU  - Philip X.-L. Feng
PY  - 2021
DO  - 10.1109/mems51782.2021.9375188
UR  - https://doi.org/10.1109/mems51782.2021.9375188
ER  -

APA

Yang, R., Xie, M., Jia, Y., Duraffourg, L., & Feng, P. X. (2021). Hybrid nanoelectromechanical switch and resistive memory in silicon nanowires by VLSI NEMS. https://doi.org/10.1109/mems51782.2021.9375188

Source records

hal · retrieved 2026-11-10T14:08:58.511Z