Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk
- DOI
- 10.1109/nano.2011.6144524
- Published
- 2011-08
- Container
- 2011 11th IEEE International Conference on Nanotechnology
- Publisher
- IEEE
- Open access
- unknown
Credibility signals
serious concern Score 29/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
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- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
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- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
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- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- serious concernRetraction Watch retraction: 1 retraction notice matched this DOI.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
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- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
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- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.1109/nano.2011.6144524,
title = {Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk},
author = {Rock-Hyun Baek and Myung-Dong Ko and Sang-Hyun Lee and Chang-Ki Baek and Kyoung Hwan Yeo and Dong-Won Kim and Jeong-Soo Lee and Dae M. Kim and Yoon-Ha Jeong},
year = {2011},
journal = {2011 11th IEEE International Conference on Nanotechnology},
doi = {10.1109/nano.2011.6144524},
url = {https://doi.org/10.1109/nano.2011.6144524}
}RIS
TY - JOUR TI - Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk AU - Rock-Hyun Baek AU - Myung-Dong Ko AU - Sang-Hyun Lee AU - Chang-Ki Baek AU - Kyoung Hwan Yeo AU - Dong-Won Kim AU - Jeong-Soo Lee AU - Dae M. Kim AU - Yoon-Ha Jeong PY - 2011 JO - 2011 11th IEEE International Conference on Nanotechnology DO - 10.1109/nano.2011.6144524 UR - https://doi.org/10.1109/nano.2011.6144524 ER -
APA
Baek, R., Ko, M., Lee, S., Baek, C., Yeo, K. H., Kim, D., Lee, J., Kim, D. M., & Jeong, Y. (2011). Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk. 2011 11th IEEE International Conference on Nanotechnology. https://doi.org/10.1109/nano.2011.6144524
Source records
- crossref · retrieved 2026-09-25T09:27:48.012Z