Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk

Rock-Hyun Baek, Myung-Dong Ko, Sang-Hyun Lee, Chang-Ki Baek, Kyoung Hwan Yeo, Dong-Won Kim, Jeong-Soo Lee, Dae M. Kim, Yoon-Ha Jeong

Open source

DOI
10.1109/nano.2011.6144524
Published
2011-08
Container
2011 11th IEEE International Conference on Nanotechnology
Publisher
IEEE
Open access
unknown

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BibTeX

@article{allodium:10.1109/nano.2011.6144524,
  title = {Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk},
  author = {Rock-Hyun Baek and Myung-Dong Ko and Sang-Hyun Lee and Chang-Ki Baek and Kyoung Hwan Yeo and Dong-Won Kim and Jeong-Soo Lee and Dae M. Kim and Yoon-Ha Jeong},
  year = {2011},
  journal = {2011 11th IEEE International Conference on Nanotechnology},
  doi = {10.1109/nano.2011.6144524},
  url = {https://doi.org/10.1109/nano.2011.6144524}
}

RIS

TY  - JOUR
TI  - Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk
AU  - Rock-Hyun Baek
AU  - Myung-Dong Ko
AU  - Sang-Hyun Lee
AU  - Chang-Ki Baek
AU  - Kyoung Hwan Yeo
AU  - Dong-Won Kim
AU  - Jeong-Soo Lee
AU  - Dae M. Kim
AU  - Yoon-Ha Jeong
PY  - 2011
JO  - 2011 11th IEEE International Conference on Nanotechnology
DO  - 10.1109/nano.2011.6144524
UR  - https://doi.org/10.1109/nano.2011.6144524
ER  - 

APA

Baek, R., Ko, M., Lee, S., Baek, C., Yeo, K. H., Kim, D., Lee, J., Kim, D. M., & Jeong, Y. (2011). Notice of Retraction Analysis of parasitic bottom capacitance in n- and p-type Si-nanowire field effect transistors on bulk. 2011 11th IEEE International Conference on Nanotechnology. https://doi.org/10.1109/nano.2011.6144524

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