A 3.4 V, 1 watt cellular DAMPS GaAs MESFET power amplifier with 50% efficiency

S.S. Taylor

Open source

DOI: 10.1109/rfic.1998.682051
Published: Not recorded
Container: 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182)
Publisher: IEEE
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1109/rfic.1998.682051,
  title = {A 3.4 V, 1 watt cellular DAMPS GaAs MESFET power amplifier with 50\% efficiency},
  author = {S.S. Taylor},
  journal = {1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182)},
  doi = {10.1109/rfic.1998.682051},
  url = {https://doi.org/10.1109/rfic.1998.682051}
}

RIS

TY  - JOUR
TI  - A 3.4 V, 1 watt cellular DAMPS GaAs MESFET power amplifier with 50% efficiency
AU  - S.S. Taylor
JO  - 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182)
DO  - 10.1109/rfic.1998.682051
UR  - https://doi.org/10.1109/rfic.1998.682051
ER  -

APA

Taylor, S. (n.d.). A 3.4 V, 1 watt cellular DAMPS GaAs MESFET power amplifier with 50% efficiency. 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.98CH36182). https://doi.org/10.1109/rfic.1998.682051

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crossref · retrieved 2026-09-25T05:23:16.385Z