Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI
- DOI
- 10.1109/sbcci62366.2024.10703990
- Published
- 2024-09-02
- Container
- 2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI)
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/sbcci62366.2024.10703990,
title = {Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI},
author = {Thalis Da C. Guedes and Johan Bourgeat and Manuel J. Barragan and Jean-Marc Duchamp and Philippe Ferrari},
year = {2024},
journal = {2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI)},
doi = {10.1109/sbcci62366.2024.10703990},
url = {https://doi.org/10.1109/sbcci62366.2024.10703990}
}RIS
TY - JOUR TI - Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI AU - Thalis Da C. Guedes AU - Johan Bourgeat AU - Manuel J. Barragan AU - Jean-Marc Duchamp AU - Philippe Ferrari PY - 2024 JO - 2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI) DO - 10.1109/sbcci62366.2024.10703990 UR - https://doi.org/10.1109/sbcci62366.2024.10703990 ER -
APA
Guedes, T. D. C., Bourgeat, J., Barragan, M. J., Duchamp, J., & Ferrari, P. (2024). Design and Evaluation of a 10 GHz LNA with Balun and Diodes for HBM and CDM ESD Protection in 28 nm CMOS FD-SOI. 2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI). https://doi.org/10.1109/sbcci62366.2024.10703990
Source records
- crossref · retrieved 2026-09-25T22:56:55.873Z