RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing

M. Perrosé, P. Acosta Alba, M. Moulin, E. Augendre, J. Lugo, J.-P. Raskin, S. Reboh

Open source

DOI
10.1109/sirf56960.2023.10046145
Published
2023-01-22
Container
Not recorded
Publisher
IEEE
Open access
no

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BibTeX

@article{allodium:10.1109/sirf56960.2023.10046145,
  title = {RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing},
  author = {M. Perrosé and P. Acosta Alba and M. Moulin and E. Augendre and J. Lugo and J.-P. Raskin and S. Reboh},
  year = {2023},
  doi = {10.1109/sirf56960.2023.10046145},
  url = {https://doi.org/10.1109/sirf56960.2023.10046145}
}

RIS

TY  - JOUR
TI  - RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing
AU  - M. Perrosé
AU  - P. Acosta Alba
AU  - M. Moulin
AU  - E. Augendre
AU  - J. Lugo
AU  - J.-P. Raskin
AU  - S. Reboh
PY  - 2023
DO  - 10.1109/sirf56960.2023.10046145
UR  - https://doi.org/10.1109/sirf56960.2023.10046145
ER  - 

APA

Perrosé, M., Alba, P. A., Moulin, M., Augendre, E., Lugo, J., Raskin, J., & Reboh, S. (2023). RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing. https://doi.org/10.1109/sirf56960.2023.10046145

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