RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing
- DOI
- 10.1109/sirf56960.2023.10046145
- Published
- 2023-01-22
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- Not recorded
- Publisher
- IEEE
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1109/sirf56960.2023.10046145,
title = {RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing},
author = {M. Perrosé and P. Acosta Alba and M. Moulin and E. Augendre and J. Lugo and J.-P. Raskin and S. Reboh},
year = {2023},
doi = {10.1109/sirf56960.2023.10046145},
url = {https://doi.org/10.1109/sirf56960.2023.10046145}
}RIS
TY - JOUR TI - RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing AU - M. Perrosé AU - P. Acosta Alba AU - M. Moulin AU - E. Augendre AU - J. Lugo AU - J.-P. Raskin AU - S. Reboh PY - 2023 DO - 10.1109/sirf56960.2023.10046145 UR - https://doi.org/10.1109/sirf56960.2023.10046145 ER -
APA
Perrosé, M., Alba, P. A., Moulin, M., Augendre, E., Lugo, J., Raskin, J., & Reboh, S. (2023). RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing. https://doi.org/10.1109/sirf56960.2023.10046145
Source records
- hal · retrieved 2026-09-26T08:51:46.888Z