A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.

Vatsyayan R, Dayeh SA

DOI: 10.1109/ted.2023.3284803
Published: 2023 Sep
Container: IEEE transactions on electron devices
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1109/ted.2023.3284803,
  title = {A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.},
  author = {Vatsyayan R and Dayeh SA},
  year = {2023},
  journal = {IEEE transactions on electron devices},
  doi = {10.1109/ted.2023.3284803},
  url = {https://doi.org/10.1109/ted.2023.3284803}
}

RIS

TY  - JOUR
TI  - A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.
AU  - Vatsyayan R
AU  - Dayeh SA
PY  - 2023
JO  - IEEE transactions on electron devices
DO  - 10.1109/ted.2023.3284803
UR  - https://doi.org/10.1109/ted.2023.3284803
ER  -

APA

R, V., & SA, D. (2023). A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits.. IEEE transactions on electron devices. https://doi.org/10.1109/ted.2023.3284803

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pubmed · retrieved 2026-09-26T15:36:35.773Z