Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.

Zhou Y, Kumar A, Park J, Zhang Y, Zhou Y, Kim S, Cubukcu E, Kuzum D

DOI: 10.1109/ted.2024.3521953
Published: 2025 Feb
Container: IEEE transactions on electron devices
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1109/ted.2024.3521953,
  title = {Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.},
  author = {Zhou Y and Kumar A and Park J and Zhang Y and Zhou Y and Kim S and Cubukcu E and Kuzum D},
  year = {2025},
  journal = {IEEE transactions on electron devices},
  doi = {10.1109/ted.2024.3521953},
  url = {https://doi.org/10.1109/ted.2024.3521953}
}

RIS

TY  - JOUR
TI  - Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.
AU  - Zhou Y
AU  - Kumar A
AU  - Park J
AU  - Zhang Y
AU  - Zhou Y
AU  - Kim S
AU  - Cubukcu E
AU  - Kuzum D
PY  - 2025
JO  - IEEE transactions on electron devices
DO  - 10.1109/ted.2024.3521953
UR  - https://doi.org/10.1109/ted.2024.3521953
ER  -

APA

Y, Z., A, K., J, P., Y, Z., Y, Z., S, K., E, C., & D, K. (2025). Modeling of Conduction Mechanism in Filament-free Multi-layer Bulk RRAM.. IEEE transactions on electron devices. https://doi.org/10.1109/ted.2024.3521953

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pubmed · retrieved 2026-09-25T22:36:52.887Z