Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors
- DOI
- 10.1109/tns.2017.2778760
- Published
- 2018
- Container
- IEEE Transactions on Nuclear Science
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1109/tns.2017.2778760,
title = {Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors},
author = {Serena Rizzolo and Vincent Goiffon and Magali Estribeau and Philippe Paillet and Claude Marcandella and Clémentine Durnez and Pierre Magnan},
year = {2018},
journal = {IEEE Transactions on Nuclear Science},
doi = {10.1109/tns.2017.2778760},
url = {https://doi.org/10.1109/tns.2017.2778760}
}RIS
TY - JOUR TI - Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors AU - Serena Rizzolo AU - Vincent Goiffon AU - Magali Estribeau AU - Philippe Paillet AU - Claude Marcandella AU - Clémentine Durnez AU - Pierre Magnan PY - 2018 JO - IEEE Transactions on Nuclear Science DO - 10.1109/tns.2017.2778760 UR - https://doi.org/10.1109/tns.2017.2778760 ER -
APA
Rizzolo, S., Goiffon, V., Estribeau, M., Paillet, P., Marcandella, C., Durnez, C., & Magnan, P. (2018). Total-Ionizing Dose Effects on Charge Transfer Efficiency and Image Lag in Pinned Photodiode CMOS Image Sensors. IEEE Transactions on Nuclear Science. https://doi.org/10.1109/tns.2017.2778760
Source records
- hal · retrieved 2026-09-26T16:24:24.502Z