Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices

Pablo Caron, Christophe Inguimbert, Laurent Artola, Robert Ecoffet, Françoise Bezerra

DOI: 10.1109/tns.2019.2902758
Published: 2019
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Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1109/tns.2019.2902758,
  title = {Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices},
  author = {Pablo Caron and Christophe Inguimbert and Laurent Artola and Robert Ecoffet and Françoise Bezerra},
  year = {2019},
  doi = {10.1109/tns.2019.2902758},
  url = {https://doi.org/10.1109/tns.2019.2902758}
}

RIS

TY  - JOUR
TI  - Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices
AU  - Pablo Caron
AU  - Christophe Inguimbert
AU  - Laurent Artola
AU  - Robert Ecoffet
AU  - Françoise Bezerra
PY  - 2019
DO  - 10.1109/tns.2019.2902758
UR  - https://doi.org/10.1109/tns.2019.2902758
ER  -

APA

Caron, P., Inguimbert, C., Artola, L., Ecoffet, R., & Bezerra, F. (2019). Physical Mechanisms of Proton-Induced Single-Event Upset in Integrated Memory Devices. https://doi.org/10.1109/tns.2019.2902758

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hal · retrieved 2026-09-26T04:43:46.421Z