Methodology for Parasitic Elements Extraction of SiC Power Module Based on N-Port Measurement
- DOI
- 10.1109/tpel.2025.3570619
- Published
- 2025-10
- Container
- IEEE Transactions on Power Electronics
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1109/tpel.2025.3570619,
title = {Methodology for Parasitic Elements Extraction of SiC Power Module Based on N-Port Measurement},
author = {Gregory Almeida and Sebastien Serpaud and Victor Dos Santos and Bernardo Cougo and Fabio Coccetti},
year = {2025},
journal = {IEEE Transactions on Power Electronics},
doi = {10.1109/tpel.2025.3570619},
url = {https://doi.org/10.1109/tpel.2025.3570619}
}RIS
TY - JOUR TI - Methodology for Parasitic Elements Extraction of SiC Power Module Based on N-Port Measurement AU - Gregory Almeida AU - Sebastien Serpaud AU - Victor Dos Santos AU - Bernardo Cougo AU - Fabio Coccetti PY - 2025 JO - IEEE Transactions on Power Electronics DO - 10.1109/tpel.2025.3570619 UR - https://doi.org/10.1109/tpel.2025.3570619 ER -
APA
Almeida, G., Serpaud, S., Santos, V. D., Cougo, B., & Coccetti, F. (2025). Methodology for Parasitic Elements Extraction of SiC Power Module Based on N-Port Measurement. IEEE Transactions on Power Electronics. https://doi.org/10.1109/tpel.2025.3570619
Source records
- hal · retrieved 2026-09-26T06:24:41.941Z