Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias
- DOI
- 10.1109/vlsi-tsa.2015.7117577
- Published
- 2015-04
- Container
- 2015 International Symposium on VLSI Technology, Systems and Applications
- Publisher
- IEEE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1109/vlsi-tsa.2015.7117577,
title = {Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias},
author = {G. Besnard and X. Garros and A. Subirats and F. Andrieu and X. Federspiel and M. Rafik and W. Schwarzenbach and G. Reimbold and O. Faynot and S. Cristoloveanu and C. Mazure},
year = {2015},
journal = {2015 International Symposium on VLSI Technology, Systems and Applications},
doi = {10.1109/vlsi-tsa.2015.7117577},
url = {https://doi.org/10.1109/vlsi-tsa.2015.7117577}
}RIS
TY - JOUR TI - Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias AU - G. Besnard AU - X. Garros AU - A. Subirats AU - F. Andrieu AU - X. Federspiel AU - M. Rafik AU - W. Schwarzenbach AU - G. Reimbold AU - O. Faynot AU - S. Cristoloveanu AU - C. Mazure PY - 2015 JO - 2015 International Symposium on VLSI Technology, Systems and Applications DO - 10.1109/vlsi-tsa.2015.7117577 UR - https://doi.org/10.1109/vlsi-tsa.2015.7117577 ER -
APA
Besnard, G., Garros, X., Subirats, A., Andrieu, F., Federspiel, X., Rafik, M., Schwarzenbach, W., Reimbold, G., Faynot, O., Cristoloveanu, S., & Mazure, C. (2015). Investigation of hot carrier reliability of SOI and strained SOI transistors using back bias. 2015 International Symposium on VLSI Technology, Systems and Applications. https://doi.org/10.1109/vlsi-tsa.2015.7117577
Source records
- crossref · retrieved 2026-09-25T12:33:50.031Z