Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors.

Diagne A, Garcia LG, Ndiaye S, Gogneau N, Vrellou M, Houard J, Rigutti L

DOI: 10.1111/jmi.13233
Published: 2024 Mar
Container: Journal of microscopy
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1111/jmi.13233,
  title = {Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors.},
  author = {Diagne A and Garcia LG and Ndiaye S and Gogneau N and Vrellou M and Houard J and Rigutti L},
  year = {2024},
  journal = {Journal of microscopy},
  doi = {10.1111/jmi.13233},
  url = {https://doi.org/10.1111/jmi.13233}
}

RIS

TY  - JOUR
TI  - Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors.
AU  - Diagne A
AU  - Garcia LG
AU  - Ndiaye S
AU  - Gogneau N
AU  - Vrellou M
AU  - Houard J
AU  - Rigutti L
PY  - 2024
JO  - Journal of microscopy
DO  - 10.1111/jmi.13233
UR  - https://doi.org/10.1111/jmi.13233
ER  -

APA

A, D., LG, G., S, N., N, G., M, V., J, H., & L, R. (2024). Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors.. Journal of microscopy. https://doi.org/10.1111/jmi.13233

Source records

pubmed · retrieved 2026-09-24T19:43:18.289Z
europe-pmc · retrieved 2026-09-24T19:43:18.290Z
hal · retrieved 2026-09-24T19:43:18.328Z