Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy
- DOI
- 10.1116/1.1374624
- Published
- 2001-07-01
- Container
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Publisher
- American Vacuum Society
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1116/1.1374624,
title = {Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy},
author = {W. E. Hoke and P. J. Lemonias and T. D. Kennedy and A. Torabi and E. K. Tong and R. J. Bourque and J.-H. Jang and G. Cueva and D. C. Dumka and I. Adesida and K. L. Chang and K. C. Hsieh},
year = {2001},
journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena},
doi = {10.1116/1.1374624},
url = {https://doi.org/10.1116/1.1374624}
}RIS
TY - JOUR TI - Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy AU - W. E. Hoke AU - P. J. Lemonias AU - T. D. Kennedy AU - A. Torabi AU - E. K. Tong AU - R. J. Bourque AU - J.-H. Jang AU - G. Cueva AU - D. C. Dumka AU - I. Adesida AU - K. L. Chang AU - K. C. Hsieh PY - 2001 JO - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena DO - 10.1116/1.1374624 UR - https://doi.org/10.1116/1.1374624 ER -
APA
Hoke, W. E., Lemonias, P. J., Kennedy, T. D., Torabi, A., Tong, E. K., Bourque, R. J., Jang, J., Cueva, G., Dumka, D. C., Adesida, I., Chang, K. L., & Hsieh, K. C. (2001). Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. https://doi.org/10.1116/1.1374624
Source records
- crossref · retrieved 2026-09-27T10:11:22.409Z