An Auger investigation of the effects of rapid thermal annealing of GaAs on Si with or without intermediate Ge layers
- DOI
- 10.1116/1.576092
- Published
- 1989-05-01
- Container
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Publisher
- American Vacuum Society
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1116/1.576092,
title = {An Auger investigation of the effects of rapid thermal annealing of GaAs on Si with or without intermediate Ge layers},
author = {R. L. Opila and M. A. Awal and E.-H. Lee and R. M. Lum},
year = {1989},
journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films},
doi = {10.1116/1.576092},
url = {https://doi.org/10.1116/1.576092}
}RIS
TY - JOUR TI - An Auger investigation of the effects of rapid thermal annealing of GaAs on Si with or without intermediate Ge layers AU - R. L. Opila AU - M. A. Awal AU - E.-H. Lee AU - R. M. Lum PY - 1989 JO - Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films DO - 10.1116/1.576092 UR - https://doi.org/10.1116/1.576092 ER -
APA
Opila, R. L., Awal, M. A., Lee, E., & Lum, R. M. (1989). An Auger investigation of the effects of rapid thermal annealing of GaAs on Si with or without intermediate Ge layers. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. https://doi.org/10.1116/1.576092
Source records
- crossref · retrieved 2026-09-27T15:27:22.921Z