Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, B. Grandidier

Open source

DOI: 10.1117/12.2042767
Published: 2014
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Open access: no

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Cite this work

BibTeX

@article{allodium:10.1117/12.2042767,
  title = {Electrical characterization of semiconductor nanowires by scanning tunneling microscopy},
  author = {Corentin Durand and Pierre Capiod and Maxime Berthe and Tao Xu and Jean-Philippe Nys and Renaud Leturcq and Philippe Caroff and B. Grandidier},
  year = {2014},
  doi = {10.1117/12.2042767},
  url = {https://doi.org/10.1117/12.2042767}
}

RIS

TY  - JOUR
TI  - Electrical characterization of semiconductor nanowires by scanning tunneling microscopy
AU  - Corentin Durand
AU  - Pierre Capiod
AU  - Maxime Berthe
AU  - Tao Xu
AU  - Jean-Philippe Nys
AU  - Renaud Leturcq
AU  - Philippe Caroff
AU  - B. Grandidier
PY  - 2014
DO  - 10.1117/12.2042767
UR  - https://doi.org/10.1117/12.2042767
ER  -

APA

Durand, C., Capiod, P., Berthe, M., Xu, T., Nys, J., Leturcq, R., Caroff, P., & Grandidier, B. (2014). Electrical characterization of semiconductor nanowires by scanning tunneling microscopy. https://doi.org/10.1117/12.2042767

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hal · retrieved 2026-09-25T10:17:30.057Z