Validation of NIEL for >1MeV electrons in silicon using the CCD47-20
- DOI
- 10.1117/12.2233975
- Published
- 2016-08-05
- Container
- SPIE Proceedings
- Publisher
- SPIE
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1117/12.2233975,
title = {Validation of NIEL for \>1MeV electrons in silicon using the CCD47-20},
author = {B. Dryer and P. H. Smith and T. Nuns and N. J. Murray and K. D. Stefanov and J. P. D. Gow and R. Burgon and D. J. Hall and A. D. Holland},
year = {2016},
journal = {SPIE Proceedings},
doi = {10.1117/12.2233975},
url = {https://doi.org/10.1117/12.2233975}
}RIS
TY - JOUR TI - Validation of NIEL for >1MeV electrons in silicon using the CCD47-20 AU - B. Dryer AU - P. H. Smith AU - T. Nuns AU - N. J. Murray AU - K. D. Stefanov AU - J. P. D. Gow AU - R. Burgon AU - D. J. Hall AU - A. D. Holland PY - 2016 JO - SPIE Proceedings DO - 10.1117/12.2233975 UR - https://doi.org/10.1117/12.2233975 ER -
APA
Dryer, B., Smith, P. H., Nuns, T., Murray, N. J., Stefanov, K. D., Gow, J. P. D., Burgon, R., Hall, D. J., & Holland, A. D. (2016). Validation of NIEL for >1MeV electrons in silicon using the CCD47-20. SPIE Proceedings. https://doi.org/10.1117/12.2233975
Source records
- crossref · retrieved 2026-11-10T07:23:45.935Z