Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing.

Xiao Z, Naik VB, Lim JH, Hou Y, Wang Z, Shao Q

DOI: 10.1126/sciadv.adp3710
Published: 2024 Sep 20
Container: Science advances
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1126/sciadv.adp3710,
  title = {Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing.},
  author = {Xiao Z and Naik VB and Lim JH and Hou Y and Wang Z and Shao Q},
  year = {2024},
  journal = {Science advances},
  doi = {10.1126/sciadv.adp3710},
  url = {https://doi.org/10.1126/sciadv.adp3710}
}

RIS

TY  - JOUR
TI  - Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing.
AU  - Xiao Z
AU  - Naik VB
AU  - Lim JH
AU  - Hou Y
AU  - Wang Z
AU  - Shao Q
PY  - 2024
JO  - Science advances
DO  - 10.1126/sciadv.adp3710
UR  - https://doi.org/10.1126/sciadv.adp3710
ER  -

APA

Z, X., VB, N., JH, L., Y, H., Z, W., & Q, S. (2024). Adapting magnetoresistive memory devices for accurate and on-chip-training-free in-memory computing.. Science advances. https://doi.org/10.1126/sciadv.adp3710

Source records

pubmed · retrieved 2026-09-26T18:48:24.745Z
europe-pmc · retrieved 2026-09-26T18:48:24.761Z