Large terahertz photovoltaic effect enhanced by phonon excitations in ferroelectric semiconductor SbSI

Yoshihiro Okamura, Guang-Yu Guo, Yoshio Kaneko, Masao Nakamura, Masato Sotome, Naoki Ogawa, Masashi Kawasaki, Yoshinori Tokura, Youtarou Takahashi

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DOI: 10.1126/sciadv.adw9796
Published: 2026-03-06
Container: Science Advances
Publisher: American Association for the Advancement of Science (AAAS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1126/sciadv.adw9796,
  title = {Large terahertz photovoltaic effect enhanced by phonon excitations in ferroelectric semiconductor SbSI},
  author = {Yoshihiro Okamura and Guang-Yu Guo and Yoshio Kaneko and Masao Nakamura and Masato Sotome and Naoki Ogawa and Masashi Kawasaki and Yoshinori Tokura and Youtarou Takahashi},
  year = {2026},
  journal = {Science Advances},
  doi = {10.1126/sciadv.adw9796},
  url = {https://doi.org/10.1126/sciadv.adw9796}
}

RIS

TY  - JOUR
TI  - Large terahertz photovoltaic effect enhanced by phonon excitations in ferroelectric semiconductor SbSI
AU  - Yoshihiro Okamura
AU  - Guang-Yu Guo
AU  - Yoshio Kaneko
AU  - Masao Nakamura
AU  - Masato Sotome
AU  - Naoki Ogawa
AU  - Masashi Kawasaki
AU  - Yoshinori Tokura
AU  - Youtarou Takahashi
PY  - 2026
JO  - Science Advances
DO  - 10.1126/sciadv.adw9796
UR  - https://doi.org/10.1126/sciadv.adw9796
ER  -

APA

Okamura, Y., Guo, G., Kaneko, Y., Nakamura, M., Sotome, M., Ogawa, N., Kawasaki, M., Tokura, Y., & Takahashi, Y. (2026). Large terahertz photovoltaic effect enhanced by phonon excitations in ferroelectric semiconductor SbSI. Science Advances. https://doi.org/10.1126/sciadv.adw9796

Source records

crossref · retrieved 2026-09-27T06:15:45.701Z