Transient absorption signatures of asymmetric carrier cooling in semiconductors
- DOI
- 10.1126/sciadv.aeh6002
- Published
- 2026-10-30
- Container
- Science Advances
- Publisher
- American Association for the Advancement of Science (AAAS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1126/sciadv.aeh6002,
title = {Transient absorption signatures of asymmetric carrier cooling in semiconductors},
author = {Ivan Maliyov and Piotr Jan Kabacinski and Hemen Hosseini and Thomas F. K. Weatherley and Artur Tuktamyshev and Stefano Sanguinetti and Nicolas Grandjean and Stefano Dal Conte and Marco Bernardi and Giulio Cerullo},
year = {2026},
journal = {Science Advances},
doi = {10.1126/sciadv.aeh6002},
url = {https://doi.org/10.1126/sciadv.aeh6002}
}RIS
TY - JOUR TI - Transient absorption signatures of asymmetric carrier cooling in semiconductors AU - Ivan Maliyov AU - Piotr Jan Kabacinski AU - Hemen Hosseini AU - Thomas F. K. Weatherley AU - Artur Tuktamyshev AU - Stefano Sanguinetti AU - Nicolas Grandjean AU - Stefano Dal Conte AU - Marco Bernardi AU - Giulio Cerullo PY - 2026 JO - Science Advances DO - 10.1126/sciadv.aeh6002 UR - https://doi.org/10.1126/sciadv.aeh6002 ER -
APA
Maliyov, I., Kabacinski, P. J., Hosseini, H., Weatherley, T. F. K., Tuktamyshev, A., Sanguinetti, S., Grandjean, N., Conte, S. D., Bernardi, M., & Cerullo, G. (2026). Transient absorption signatures of asymmetric carrier cooling in semiconductors. Science Advances. https://doi.org/10.1126/sciadv.aeh6002
Source records
- crossref · retrieved 2026-11-06T09:18:18.668Z