Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C <sup>+</sup> Beams

J. L. Robertson, S. C. Moss, Y. Lifshitz, S. R. Kasi, J. W. Rabalais, G. D. Lempert, E. Rapoport

DOI: 10.1126/science.243.4894.1047
Published: 1989-02-24
Container: Science
Publisher: American Association for the Advancement of Science (AAAS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1126/science.243.4894.1047,
  title = {Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C
            <sup>+</sup>
            Beams},
  author = {J. L. Robertson and S. C. Moss and Y. Lifshitz and S. R. Kasi and J. W. Rabalais and G. D. Lempert and E. Rapoport},
  year = {1989},
  journal = {Science},
  doi = {10.1126/science.243.4894.1047},
  url = {https://doi.org/10.1126/science.243.4894.1047}
}

RIS

TY  - JOUR
TI  - Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C
            <sup>+</sup>
            Beams
AU  - J. L. Robertson
AU  - S. C. Moss
AU  - Y. Lifshitz
AU  - S. R. Kasi
AU  - J. W. Rabalais
AU  - G. D. Lempert
AU  - E. Rapoport
PY  - 1989
JO  - Science
DO  - 10.1126/science.243.4894.1047
UR  - https://doi.org/10.1126/science.243.4894.1047
ER  -

APA

Robertson, J. L., Moss, S. C., Lifshitz, Y., Kasi, S. R., Rabalais, J. W., Lempert, G. D., & Rapoport, E. (1989). Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C <sup>+</sup> Beams. Science. https://doi.org/10.1126/science.243.4894.1047

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crossref · retrieved 2026-09-24T20:29:14.879Z