Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.

Wu Z, Yang K, Meng W, Wang W, Zhao Y, Yang F, Ding R, Li H, Peng Y, Yang Z, Ang YS, Cai S, Yang M, Wang J, Li LJ, Hao J

Open source

DOI
10.1126/science.adx6059
Published
2026 Aug 27
Container
Science (New York, N.Y.)
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1126/science.adx6059,
  title = {Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.},
  author = {Wu Z and Yang K and Meng W and Wang W and Zhao Y and Yang F and Ding R and Li H and Peng Y and Yang Z and Ang YS and Cai S and Yang M and Wang J and Li LJ and Hao J},
  year = {2026},
  journal = {Science (New York, N.Y.)},
  doi = {10.1126/science.adx6059},
  url = {https://doi.org/10.1126/science.adx6059}
}

RIS

TY  - JOUR
TI  - Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.
AU  - Wu Z
AU  - Yang K
AU  - Meng W
AU  - Wang W
AU  - Zhao Y
AU  - Yang F
AU  - Ding R
AU  - Li H
AU  - Peng Y
AU  - Yang Z
AU  - Ang YS
AU  - Cai S
AU  - Yang M
AU  - Wang J
AU  - Li LJ
AU  - Hao J
PY  - 2026
JO  - Science (New York, N.Y.)
DO  - 10.1126/science.adx6059
UR  - https://doi.org/10.1126/science.adx6059
ER  - 

APA

Z, W., K, Y., W, M., W, W., Y, Z., F, Y., R, D., H, L., Y, P., Z, Y., YS, A., S, C., M, Y., J, W., LJ, L., & J, H. (2026). Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.. Science (New York, N.Y.). https://doi.org/10.1126/science.adx6059

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