Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.

Wu Z, Yang K, Meng W, Wang W, Zhao Y, Yang F, Ding R, Li H, Peng Y, Yang Z, Ang YS, Cai S, Yang M, Wang J, Li LJ, Hao J.

Open source

DOI: 10.1126/science.adx6059
Published: 2026-08-27
Container: Science
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1126/science.adx6059,
  title = {Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.},
  author = {Wu Z and  Yang K and  Meng W and  Wang W and  Zhao Y and  Yang F and  Ding R and  Li H and  Peng Y and  Yang Z and  Ang YS and  Cai S and  Yang M and  Wang J and  Li LJ and  Hao J.},
  year = {2026},
  journal = {Science},
  doi = {10.1126/science.adx6059},
  url = {https://doi.org/10.1126/science.adx6059}
}

RIS

TY  - JOUR
TI  - Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.
AU  - Wu Z
AU  -  Yang K
AU  -  Meng W
AU  -  Wang W
AU  -  Zhao Y
AU  -  Yang F
AU  -  Ding R
AU  -  Li H
AU  -  Peng Y
AU  -  Yang Z
AU  -  Ang YS
AU  -  Cai S
AU  -  Yang M
AU  -  Wang J
AU  -  Li LJ
AU  -  Hao J.
PY  - 2026
JO  - Science
DO  - 10.1126/science.adx6059
UR  - https://doi.org/10.1126/science.adx6059
ER  -

APA

Z, W., K, Y., W, M., W, W., Y, Z., F, Y., R, D., H, L., Y, P., Z, Y., YS, A., S, C., M, Y., J, W., LJ, L., & J., H. (2026). Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit.. Science. https://doi.org/10.1126/science.adx6059

Source records

europe-pmc · retrieved 2026-09-25T05:18:12.776Z