AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs

Ellapu Bhanu Prakash, Sushanta Bordoloi

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DOI: 10.1134/s1063782626601366
Published: 2026-09-02
Container: Semiconductors
Publisher: Pleiades Publishing Ltd
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1134/s1063782626601366,
  title = {AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs},
  author = {Ellapu Bhanu Prakash and Sushanta Bordoloi},
  year = {2026},
  journal = {Semiconductors},
  doi = {10.1134/s1063782626601366},
  url = {https://doi.org/10.1134/s1063782626601366}
}

RIS

TY  - JOUR
TI  - AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs
AU  - Ellapu Bhanu Prakash
AU  - Sushanta Bordoloi
PY  - 2026
JO  - Semiconductors
DO  - 10.1134/s1063782626601366
UR  - https://doi.org/10.1134/s1063782626601366
ER  -

APA

Prakash, E. B., & Bordoloi, S. (2026). AlN Spacer-Induced Improvement in DC, RF, and Breakdown Characteristics of AlN Buffered AlGaN/GaN HEMTs. Semiconductors. https://doi.org/10.1134/s1063782626601366

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crossref · retrieved 2026-11-10T12:08:54.092Z