Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers

P. Muthu Subramanian, T. Subhashini, M. Jayasheela, P. Bujjibabu

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DOI: 10.1134/s1063782626601779
Published: 2026-09-02
Container: Semiconductors
Publisher: Pleiades Publishing Ltd
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1134/s1063782626601779,
  title = {Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers},
  author = {P. Muthu Subramanian and T. Subhashini and M. Jayasheela and P. Bujjibabu},
  year = {2026},
  journal = {Semiconductors},
  doi = {10.1134/s1063782626601779},
  url = {https://doi.org/10.1134/s1063782626601779}
}

RIS

TY  - JOUR
TI  - Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers
AU  - P. Muthu Subramanian
AU  - T. Subhashini
AU  - M. Jayasheela
AU  - P. Bujjibabu
PY  - 2026
JO  - Semiconductors
DO  - 10.1134/s1063782626601779
UR  - https://doi.org/10.1134/s1063782626601779
ER  -

APA

Subramanian, P. M., Subhashini, T., Jayasheela, M., & Bujjibabu, P. (2026). Comparative Performance Analysis of Multi-Barrier GaN HEMTs with β-Ga2O3 Buffer and InGaN Back-Barrier Layers. Semiconductors. https://doi.org/10.1134/s1063782626601779

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crossref · retrieved 2026-09-25T21:46:10.640Z