Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors
- DOI
- 10.1142/s0129156414500232
- Published
- 2014-09
- Container
- International Journal of High Speed Electronics and Systems
- Publisher
- World Scientific Pub Co Pte Lt
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1142/s0129156414500232,
title = {Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors},
author = {Olivier Bonnaud and Peng Zhang and Emmanuel Jacques and Regis Rogel},
year = {2014},
journal = {International Journal of High Speed Electronics and Systems},
doi = {10.1142/s0129156414500232},
url = {https://doi.org/10.1142/s0129156414500232}
}RIS
TY - JOUR TI - Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors AU - Olivier Bonnaud AU - Peng Zhang AU - Emmanuel Jacques AU - Regis Rogel PY - 2014 JO - International Journal of High Speed Electronics and Systems DO - 10.1142/s0129156414500232 UR - https://doi.org/10.1142/s0129156414500232 ER -
APA
Bonnaud, O., Zhang, P., Jacques, E., & Rogel, R. (2014). Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors. International Journal of High Speed Electronics and Systems. https://doi.org/10.1142/s0129156414500232
Source records
- crossref · retrieved 2026-11-04T17:34:38.111Z