Reactive Ion Etching Mechanism of RuO<sub>2</sub> Thin Films in Oxygen Plasma with the Addition of CF<sub>4</sub>, Cl<sub>2</sub>, and N<sub>2</sub>
- DOI
- 10.1143/jjap.37.2634
- Published
- 1998-05-01
- Container
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1143/jjap.37.2634,
title = {Reactive Ion Etching Mechanism of RuO<sub>2</sub> Thin Films in Oxygen Plasma with the Addition of CF<sub>4</sub>, Cl<sub>2</sub>, and N<sub>2</sub>},
author = {Eung-Jik Lee Eung-Jik Lee and Jin-Woong Kim Jin-Woong Kim and Won-Jong Lee Won-Jong Lee},
year = {1998},
journal = {Japanese Journal of Applied Physics},
doi = {10.1143/jjap.37.2634},
url = {https://doi.org/10.1143/jjap.37.2634}
}RIS
TY - JOUR TI - Reactive Ion Etching Mechanism of RuO<sub>2</sub> Thin Films in Oxygen Plasma with the Addition of CF<sub>4</sub>, Cl<sub>2</sub>, and N<sub>2</sub> AU - Eung-Jik Lee Eung-Jik Lee AU - Jin-Woong Kim Jin-Woong Kim AU - Won-Jong Lee Won-Jong Lee PY - 1998 JO - Japanese Journal of Applied Physics DO - 10.1143/jjap.37.2634 UR - https://doi.org/10.1143/jjap.37.2634 ER -
APA
Lee, E. L. E., Kim, J. K. J., & Lee, W. L. W. (1998). Reactive Ion Etching Mechanism of RuO<sub>2</sub> Thin Films in Oxygen Plasma with the Addition of CF<sub>4</sub>, Cl<sub>2</sub>, and N<sub>2</sub>. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.37.2634
Source records
- crossref · retrieved 2026-09-27T01:06:14.641Z