Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition

Yudi Darma, Hideki Murakami, Seiichi Miyazaki

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DOI: 10.1143/jjap.42.4129
Published: 2003-06-30
Container: Japanese Journal of Applied Physics
Publisher: IOP Publishing
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1143/jjap.42.4129,
  title = {Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition},
  author = {Yudi Darma and Hideki Murakami and Seiichi Miyazaki},
  year = {2003},
  journal = {Japanese Journal of Applied Physics},
  doi = {10.1143/jjap.42.4129},
  url = {https://doi.org/10.1143/jjap.42.4129}
}

RIS

TY  - JOUR
TI  - Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition
AU  - Yudi Darma
AU  - Hideki Murakami
AU  - Seiichi Miyazaki
PY  - 2003
JO  - Japanese Journal of Applied Physics
DO  - 10.1143/jjap.42.4129
UR  - https://doi.org/10.1143/jjap.42.4129
ER  -

APA

Darma, Y., Murakami, H., & Miyazaki, S. (2003). Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.42.4129

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crossref · retrieved 2026-09-27T07:30:37.361Z