Surface Chemistry of Preferentially (111)- and (220)-Crystal-Oriented Microcrystalline Silicon Films by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
- DOI
- 10.1143/jjap.49.081402
- Published
- 2010-08-01
- Container
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1143/jjap.49.081402,
title = {Surface Chemistry of Preferentially (111)- and (220)-Crystal-Oriented Microcrystalline Silicon Films by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition},
author = {Daisuke Ohba and Chien-Hui Lai and Zeguo Tang and Hajime Shirai},
year = {2010},
journal = {Japanese Journal of Applied Physics},
doi = {10.1143/jjap.49.081402},
url = {https://doi.org/10.1143/jjap.49.081402}
}RIS
TY - JOUR TI - Surface Chemistry of Preferentially (111)- and (220)-Crystal-Oriented Microcrystalline Silicon Films by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition AU - Daisuke Ohba AU - Chien-Hui Lai AU - Zeguo Tang AU - Hajime Shirai PY - 2010 JO - Japanese Journal of Applied Physics DO - 10.1143/jjap.49.081402 UR - https://doi.org/10.1143/jjap.49.081402 ER -
APA
Ohba, D., Lai, C., Tang, Z., & Shirai, H. (2010). Surface Chemistry of Preferentially (111)- and (220)-Crystal-Oriented Microcrystalline Silicon Films by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.49.081402
Source records
- crossref · retrieved 2026-09-25T03:24:45.399Z