Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry
- DOI
- 10.1143/jjap.50.08jg02
- Published
- 2011-08-01
- Container
- Japanese Journal of Applied Physics
- Publisher
- IOP Publishing
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1143/jjap.50.08jg02,
title = {Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry},
author = {Tomohisa Ino and Tatsuya Hayashi and Keiji Ueno and Hajime Shirai},
year = {2011},
journal = {Japanese Journal of Applied Physics},
doi = {10.1143/jjap.50.08jg02},
url = {https://doi.org/10.1143/jjap.50.08jg02}
}RIS
TY - JOUR TI - Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry AU - Tomohisa Ino AU - Tatsuya Hayashi AU - Keiji Ueno AU - Hajime Shirai PY - 2011 JO - Japanese Journal of Applied Physics DO - 10.1143/jjap.50.08jg02 UR - https://doi.org/10.1143/jjap.50.08jg02 ER -
APA
Ino, T., Hayashi, T., Ueno, K., & Shirai, H. (2011). Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry. Japanese Journal of Applied Physics. https://doi.org/10.1143/jjap.50.08jg02
Source records
- crossref · retrieved 2026-09-25T06:04:54.436Z