Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film
- DOI
- 10.1149/2.007302ssl
- Published
- 2012-11-28
- Container
- Electrochemical and Solid-State Letters
- Publisher
- Not recorded
- Open access
- no
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limited evidence Score 43/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
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Cite this work
BibTeX
@article{allodium:10.1149/2.007302ssl,
title = {Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film},
author = {Liping Zhang and Rami Ljazouli and Philippe Lefaucheux and Thomas Tillocher and Remi Dussart and Yuri Mankelevich and Jean-Francois de Marneffe and Stefan de Gendt and Mikhail Baklanov},
year = {2012},
journal = {Electrochemical and Solid-State Letters},
doi = {10.1149/2.007302ssl},
url = {https://doi.org/10.1149/2.007302ssl}
}RIS
TY - JOUR TI - Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film AU - Liping Zhang AU - Rami Ljazouli AU - Philippe Lefaucheux AU - Thomas Tillocher AU - Remi Dussart AU - Yuri Mankelevich AU - Jean-Francois de Marneffe AU - Stefan de Gendt AU - Mikhail Baklanov PY - 2012 JO - Electrochemical and Solid-State Letters DO - 10.1149/2.007302ssl UR - https://doi.org/10.1149/2.007302ssl ER -
APA
Zhang, L., Ljazouli, R., Lefaucheux, P., Tillocher, T., Dussart, R., Mankelevich, Y., Marneffe, J. D., Gendt, S. D., & Baklanov, M. (2012). Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film. Electrochemical and Solid-State Letters. https://doi.org/10.1149/2.007302ssl
Source records
- hal · retrieved 2026-09-26T12:41:46.791Z