Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

P. T. Tue, T. Miyasako, E. Tokumitsu, T. Shimoda

Open source

DOI: 10.1155/2013/692469
Published: 2013
Container: Advances in Materials Science and Engineering
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1155/2013/692469,
  title = {Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor},
  author = {P. T. Tue and T. Miyasako and E. Tokumitsu and T. Shimoda},
  year = {2013},
  journal = {Advances in Materials Science and Engineering},
  doi = {10.1155/2013/692469},
  url = {https://doi.org/10.1155/2013/692469}
}

RIS

TY  - JOUR
TI  - Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor
AU  - P. T. Tue
AU  - T. Miyasako
AU  - E. Tokumitsu
AU  - T. Shimoda
PY  - 2013
JO  - Advances in Materials Science and Engineering
DO  - 10.1155/2013/692469
UR  - https://doi.org/10.1155/2013/692469
ER  -

APA

Tue, P. T., Miyasako, T., Tokumitsu, E., & Shimoda, T. (2013). Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor. Advances in Materials Science and Engineering. https://doi.org/10.1155/2013/692469

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crossref · retrieved 2026-09-26T19:56:20.267Z