Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process

Xiaohuan Xue, Jianjun Song, Rongxi Xuan

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DOI: 10.1155/2019/2096854
Published: 2019-09-16
Container: Advances in Condensed Matter Physics
Publisher: Wiley
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1155/2019/2096854,
  title = {Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process},
  author = {Xiaohuan Xue and Jianjun Song and Rongxi Xuan},
  year = {2019},
  journal = {Advances in Condensed Matter Physics},
  doi = {10.1155/2019/2096854},
  url = {https://doi.org/10.1155/2019/2096854}
}

RIS

TY  - JOUR
TI  - Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process
AU  - Xiaohuan Xue
AU  - Jianjun Song
AU  - Rongxi Xuan
PY  - 2019
JO  - Advances in Condensed Matter Physics
DO  - 10.1155/2019/2096854
UR  - https://doi.org/10.1155/2019/2096854
ER  -

APA

Xue, X., Song, J., & Xuan, R. (2019). Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process. Advances in Condensed Matter Physics. https://doi.org/10.1155/2019/2096854

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crossref · retrieved 2026-09-25T20:39:38.247Z