The impact of channel fin width on electrical characteristics of Si-FinFET

Yousif Atalla, Yasir Hashim, Abdul Nasir Abd. Ghafar

Open source

DOI: 10.11591/ijece.v12i1.pp201-207
Published: 2022-02-01
Container: International Journal of Electrical and Computer Engineering (IJECE)
Publisher: Institute of Advanced Engineering and Science
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.11591/ijece.v12i1.pp201-207,
  title = {The impact of channel fin width on electrical characteristics of Si-FinFET},
  author = {Yousif Atalla and Yasir Hashim and Abdul Nasir Abd. Ghafar},
  year = {2022},
  journal = {International Journal of Electrical and Computer Engineering (IJECE)},
  doi = {10.11591/ijece.v12i1.pp201-207},
  url = {https://doi.org/10.11591/ijece.v12i1.pp201-207}
}

RIS

TY  - JOUR
TI  - The impact of channel fin width on electrical characteristics of Si-FinFET
AU  - Yousif Atalla
AU  - Yasir Hashim
AU  - Abdul Nasir Abd. Ghafar
PY  - 2022
JO  - International Journal of Electrical and Computer Engineering (IJECE)
DO  - 10.11591/ijece.v12i1.pp201-207
UR  - https://doi.org/10.11591/ijece.v12i1.pp201-207
ER  -

APA

Atalla, Y., Hashim, Y., & Ghafar, A. N. A. (2022). The impact of channel fin width on electrical characteristics of Si-FinFET. International Journal of Electrical and Computer Engineering (IJECE). https://doi.org/10.11591/ijece.v12i1.pp201-207

Source records

crossref · retrieved 2026-09-25T12:54:54.535Z